12″ Silicon Wafers 300mm TOX ( Si Thermal Oxidation Wafer )

UNIELECTRON offers 300mm silicon oxide wafer and dioxide wafer. Thermal oxide silicon wafer or silicon dioxide wafer is a bare silicon wafer with oxide layer grown by dry or wet oxidation process. The thermal oxide layer of the silicon wafer is usually grown in a horizontal tube furnace, and the silicon wafer oxide temperature range is generally 900 ℃ ~ 1200 ℃. Compared with CVD oxide layer, silicon wafer oxide layer has higher uniformity, better compactness, higher dielectric strength and better quality.

1. Parameters of Silicon Oxide Wafer

Parameters	Value
Type of ingot	Grown according to the Czochralski method
Diametr, mm	300 ± 0,2
Wafers Life time, month	12
Conductivity type	P
Dopant	B (boron)
Oxigen max, OLD-PPMA	40
Carbon , PPMA	1
The exclusion of the edge zone, mm	3
Crystallographic orientation	<100>
Deviation of surface orientation from a given crystallographic plane, degrees	0,5
Volume resistivity, Ohm · cm	10-40
The number of dislocations, cm-2	0
The number of point etching defects, cm-2	0
The number of point oxidative defects, cm -2	500
The maximum iron content in the volume, E10AT/CC	10
Primary Notch	yes
Notch Location	110
Notch size, mm	2,3
Notch Form	V
Wafer thickness, microns	775±25
Type of marking	Laser
Marking Location	back side
Edge profile	By SEMI T / 4
Front scratches	absent
Total wafer thickness change (TTV), microns	5
Deflection, microns	60
Wafers are oxidized to a thickness, microns	0,1-1
The number of particles on a surface larger than 0.09 microns	50
Contamination of the back side	absent
Surface content of aluminium, E10AT/CM2	1
Surface content of calcium, E10AT/CM2	1
Surface content of chromium, E10AT/CM2	1
Surface content of copper, E10AT/CM2	1
Surface content of iron, E10AT/CM2	1
Surface content of potassium, E10AT/CM2	1
Surface content of natrium, E10AT/CM2	1
Surface content of nickel, E10AT/CM2	1
Surface content of zinc, E10AT/CM2	1
Requirements for the accuracy of flatness, microns	0,3
The exclusion of the edge zone when measuring flatness, mm	3

Packing requirements:

Parameter
Type of packaging	MW300GT-A
Inner Container Material	Polyethylene
Outer Packing Material	Aluminum
Number of pieces in one package	25
Reusability	yes

2. Oxidation Methods

Dry oxidation and wet oxidation are the most important methods for growing silicon on oxide wafer.

2.1 Dry oxidation silicon wafer

Dry oxygen oxidation silicon reacts with oxygen at the temperature of 850-1200 ℃, the rate of thermal oxide growth silicon wafers is low but the quality is good, so it can be used for MOS insulated gate growth. Silicon wafer oxide thickness is 10nm~300nm.

2.2 Wet oxygen oxidation wafer 

At high temperature, water vapor is used to enter the furnace tube and form oxide layer on the surface of silicon wafer. The density of wet oxygen oxidation is slightly worse than that of dry oxygen oxidation, but the advantage of wet oxygen oxidation is that it has a higher growth rate, which is suitable for the film growth above 500 nm. Wet oxidation capacity: 100nm~6um.

During the silicon wafer oxidation process, the thermal silicon oxide wafer is an excellent dielectric layer as an insulator. In many silicon-based devices, the thermal oxide layer plays an important role as a doping prevention layer and a surface dielectric.

3. FAQ: 

Could you please check if accept the packaging MW300GT-A as attached picture?

— Yes, please go ahead.

send us email at [email protected] and [email protected]

2″ Monocrystalline silicon wafers with insulating oxide

2″ Monocrystalline Silicon Wafer with Thermal Oxide 20nm

4″ Monocrystalline silicon wafers with insulating oxide

4″ Monocrystalline Silicon Wafer with Thermal oxide 20nm

6″ Monocrystalline silicon wafers with insulating oxide

6″ Monocrystalline Silicon Wafer with Thermal Oxide 20nm

2″ Silicon Oxide Wafer

3″ Silicon Oxide Wafer

4″ Silicon Oxide Wafer