| No | Item | limits | comments |
| 1 | GENERAL CHARACTERISTICS | ||
| 1.1 | Growth Method | Czochralski | – |
| 1.2 | Crystal Orientation | (111) | – |
| 1.3 | Conductivity Type | N | – |
| 1.4 | Dopant | Arsenic | – |
| 2 | ELECTRICAL CHARACTERISTICS | ||
| 2.1 | Resistivity | 0,0024-0,0036 W-cm | Center Point |
| 2.2 | Radial Resistivity Variation | max 15 % | ASTM F81, plan B |
| 3 | CHEMICAL CHARACTERISTICS | ||
| 3.1 | Boron Concentration | max 1E15 atom/cm3 | ASTM F1391 |
| 4 | STRUCTURAL CHARACTERISTICS | ||
| 4.1 | Dislocations | none | After Etching |
| 4.2 | Slip, Lineage, Twin, Swirl, Shallow Pits | not detect visual inspection | After Etching |
| 5 | MECHANICAL CHARACTERISTICS | ||
| 5.1 | Diameter | 100,7-101,0 mm | – |
| 5.2 | Length of Ingot | 200-350 mm ≤ 20%
350-480 mm ≥ 80 % |
– |
| 5.3 | Mechanical Damages: Cracks, Pores, Chipping, Contaminations | none | – |
