| No | Item | limits | comments |
| 1 | GENERAL CHARACTERISTICS | ||
| 1.1 | Growth Method | Czochralski | – |
| 1.2 | Crystal Orientation | (100) | – |
| 1.3 | Conductivity Type | Р | – |
| 1.4 | Dopand | Boron | – |
| 2 | ELECTRICAL CHARACTERISTICS | ||
| 2.1 | Resistivity | 0,004-0,006 W-cm | ASTM F43Center Point |
| 2.2 | Radial Resistivity Variation | max 10 % | ASTM F81, plan B |
| 3 | STRUCTURAL CHARACTERISTICS | ||
| 3.1 | Dislocations | less then 10 /cm2 | After Etching |
| 3.2 | Slip, Lineage, Twin, Swirl, Shallow Pits | not detect visual inspection | After Etching |
| 4 | MECHANICAL CHARACTERISTICS | ||
| 4.1 | Diameter | 100,7-101,0 mm | – |
| 4.2 | Length of Ingot | 200-350 mm ≤ 20%
350-480 mm ≥ 80 % |
– |
| 4.3 | Mechanical Damages: Cracks, Pores, Chipping, Contaminations | none | – |
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100 B0,005(100) Ingot
Single Crystal Silicon Ingot, 100 mm, Boron, P-type, Resistivity 0,005 Om*cm, Orientation (100)
